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Fast Recovery Epitaxial Diode (FRED) DSEI 2x101 IFAVM = 2x91 A VRRM = 1200 V trr = 40 ns AC-1 IK-10 VRSM V 1200 VRRM V 1200 Type DSEI 2x 101-12P LN -9 VX-18 D5 Symbol IFRMS IFAVM IFRM IFSM TVJ TVJM Tstg Ptot VISOL Md Weight Symbol IR Conditions TVJ = 25C VR = VRRM TVJ = 25C VR = 0.8 * VRRM TVJ = 125C VR = 0.8 * VRRM IF = 100 A; TVJ = 150C TVJ = 25C TC = 25C 50/60 Hz, RMS IISOL 1 mA Mounting torque (M4) t = 1 min t=1s Conditions Maximum Ratings (per diode) 130 91 tbd 900 -40...+150 150 -40...+150 250 2500 3000 1.5 - 2.0 14 - 18 24 A A A A C C C W V~ V~ Nm lb.in. g Features * * * * * * 2 independent FRED in 1 package Isolation voltage 3000 V~ Planar passivated chips Leads suitable for PC board soldering Very short recovery time Soft recovery behaviour TVJ = TVJM TC = 50C; rectangular; d = 0.5 tP < 10 s; rep. rating; pulse width limited by TVJM TVJ = 45C; t = 10 ms (50 Hz), sine Applications * Antiparallel diode for high frequency switching devices * Anti saturation diode * Snubber diode * Free wheeling diode in converters and motor control circuits * Rectifiers in switch mode power supplies (SMPS) * Inductive heating and melting * Uninterruptible power supplies (UPS) * Ultrasonic cleaners and welders Advantages * Easy to mount with two screws * Space and weight savings * Improved temperature and power cycling capability * Low noise switching * Small and light weight Characteristic Values (per diode) typ. max. 3.0 1.5 15 1.61 1.87 1.01 6.1 0.5 0.05 mA mA mA V V V m K/W K/W ns A mm mm m/s VF VT0 rT RthJC RthCK trr IRM dS dA a For power-loss calculations only TVJ = TVJM IF = 1 A; -di/dt = 400 A/s VR = 30 V; TVJ = 25C VR = 100 V; IF = 75 A; -diF/dt = 200 A/s L 0.05 H; TVJ = 100C Creeping distance on surface Creeping distance in air Allowable acceleration 40 24 60 30 min. 11.2 min. 11.2 max. 50 IFAVM rating includes reverse blocking losses at TVJM, VR = 0.8 VRRM, duty cycle d = 0.5 Data according to IEC 60747 IXYS reserves the right to change limits, test conditions and dimensions 139 (c) 2001 IXYS All rights reserved 1-2 DSEI 2x 101-12P 150 A 125 IF 100 TVJ=150C 16 T = 100C C VVJ= 600V 14 R Qr 12 10 8 TVJ=100C IF=200A IF=100A IF= 50A 140 TVJ= 100C A VR =600V 120 IRM 100 80 60 40 20 0 A/s 1000 -diF/dt 0 200 400 600 A/s 1000 800 -diF/dt IF=200A IF=100A IF= 50A 75 50 TVJ= 25C 6 4 2 0 100 25 0 0.0 0.5 1.0 1.5 V VF 2.0 D5 Fig. 1 Forward current IF versus VF Fig. 2 Reverse recovery charge Qr versus -diF/dt 500 ns 450 trr 400 TVJ= 100C VR = 600V Fig. 3 Peak reverse current IRM versus -diF/dt 60 V 50 VFR 40 tfr VFR TVJ= 100C IF = 100A 1.4 1.5 s tfr 1.0 1.2 Kf 1.0 IRM 350 300 0.8 IF=200A IF=100A IF= 50A 30 20 10 0 0.0 1000 A/s 0.5 0.6 Qr 250 200 0 40 80 120 C 160 TVJ 0 200 400 600 A/s 1000 800 -diF/dt 0.4 0 200 400 600 800 diF/dt Fig. 4 Dynamic parameters Qr, IRM versus TVJ 1 K/W Fig. 5 Recovery time trr versus -diF/dt Fig. 6 Peak forward voltage VFR and tfr versus diF/dt Dimensions in mm (1mm = 0.0394") D=0.7 ZthJC 0.5 0.3 0.2 0.1 0.1 0.05 Single Pulse 0.05 0.001 DSEI 2x101-12 0.01 0.1 1s 10 t Fig. 7 Transient thermal impedance junction to case at various duty cycles (c) 2001 IXYS All rights reserved 2-2 |
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